| 发明名称 |
Dopant profile spreading for arsenic source/drain |
| 摘要 |
An improved process for forming shallow arsenic-doped source/drain regions in MOS devices utilizes a two-step arsenic implant which lowers the surface arsenic concentration while maintaining sharp junction profile and desired junction depth. Minimizing the excess arsenic in the surface region improves silicidation characteristics.
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| 申请公布号 |
US5789802(A) |
申请公布日期 |
1998.08.04 |
| 申请号 |
US19960667570 |
申请日期 |
1996.06.21 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TRIPSAS, NICHOLAS H. |
| 分类号 |
H01L21/265;H01L21/8234;H01L29/08;H01L29/45;(IPC1-7):H01L29/67;H01L29/76;H01L29/94 |
主分类号 |
H01L21/265 |
| 代理机构 |
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