发明名称 |
Low dielectric constant material for electronics applications |
摘要 |
This invention provides a semiconductor device with reduced capacitance between adjacent conductors. A porous dielectric layer 28 is formed on conductors 24. A non-porous dielectric layer 30 is formed on porous layer 28, and a second porous dielectric layer 36 is formed on non-porous layer 30. The porous dielectric layers comprise open-pored networks, preferably formed by an atmospheric pressure aerogel process. The present invention allows the construction of semiconductor devices employing multiple layers of conductors with porous low dielectric constant insulation.
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申请公布号 |
US5789819(A) |
申请公布日期 |
1998.08.04 |
申请号 |
US19950483029 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
GNADE, BRUCE E.;CHO, CHIH-CHEN;SMITH, DOUGLAS M. |
分类号 |
C04B38/00;H01L21/312;H01L21/314;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L23/485 |
主分类号 |
C04B38/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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