| 摘要 |
A manufacturing method of a nonvolatile memory includes the steps of forming a field oxide film on a Cell Region (CR) and a Peripheral circuit Area (PA) of a semiconductor substrate, and then defining an active region, sequentially forming a tunneling oxide film, a lower gate, and a gate insulating film, eliminating the gate insulating film, the lower gate, and tunneling oxide film on the PA, and then forming a gate oxide film on the substrate, forming an upper gate and an upper insulating film on the whole surface of the semiconductor substrate, etching the upper insulating film and the upper gate simultaneously (in the first embodiment) or separately (in the second embodiment), and then forming a single layer gate pattern and a stack gate pattern on the PA and on the CR, respectively, etching the gate insulating film and the lower gate on the CR by using a stack gate pattern, forming an interlayer dielectric film on the semiconductor substrate, and then forming a metallic wiring. Thus, a function of detecting an end point can be prevented from lowering, a process can also be simplified, and further a loss of the field oxide film can be minimized, so that it is possible to prevent the device isolation characteristics from being reduced and damage of the substrate can be prevented.
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