| 摘要 |
A compound semiconductor device having a first compound semiconductor layer, a second compound semiconductor layer containing at least In or Al which is in contact with the first compound semiconductor layer to generate a two dimensional electron gas layer in the interface between the first and second compound semiconductor layers, a third compound semiconductor layer of GaAs provided so as to be coated on the second compound semiconductor layer, a source electrode and a drain electrode electrically connected to the two dimensional electron gas layer, and a gate electrode provided between the source electrode and the drain electrode so as to be in Schottky contact with the third compound semiconductor layer.
|
