发明名称 Wet etching station and a wet etching method adapted for utilizing the same
摘要 A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.
申请公布号 US5788800(A) 申请公布日期 1998.08.04
申请号 US19960773062 申请日期 1996.12.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, KWANG-YUL;WOO, SHANG-SEOK;KANG, JUNG-HO
分类号 H01L21/306;(IPC1-7):H01L21/302 主分类号 H01L21/306
代理机构 代理人
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