发明名称 |
Wet etching station and a wet etching method adapted for utilizing the same |
摘要 |
A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.
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申请公布号 |
US5788800(A) |
申请公布日期 |
1998.08.04 |
申请号 |
US19960773062 |
申请日期 |
1996.12.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, KWANG-YUL;WOO, SHANG-SEOK;KANG, JUNG-HO |
分类号 |
H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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