| 摘要 |
The leakage current at the silicon-to-silicon dioxide interfaces of an active pixel sensor cell is substantially reduced by eliminating field oxide from the cell, and by insuring that, during integration, every surface region of the cell that is not heavily doped is either biased into accumulation or biased into inversion. Each of these states, in turn, substantially limits the number of electrons from thermally-generated electron-hole pairs at the surface that can contribute to the leakage current.
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