发明名称 |
Eliminating metal extrusions by controlling the liner deposition temperature |
摘要 |
An improved integrated circuit manufacturing process for forming interlevel dielectrics in multilevel metallization structures eliminates extrusions of metal into vias following via etch. The deposition temperature of the conformal dielectric liner is controlled relative to the subsequent degas temperature, thereby lowering thermal compressive stresses in the metal layer.
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申请公布号 |
US5789315(A) |
申请公布日期 |
1998.08.04 |
申请号 |
US19960682231 |
申请日期 |
1996.07.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BESSER, PAUL R.;CHEUNG, ROBIN W. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/441 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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