发明名称 PRODUCTION OF ZINC OXIDE THIN FILM, PRODUCTION OF SEMICONDUCTOR ELEMENT SUBSTRATE USING THE SAME AND PRODUCTION OF PHOTOVOLATIC ELEMENT
摘要 PROBLEM TO BE SOLVED: To stably form a zinc oxide thin film having an excellent adhesion property and uniformity on a long-sized conductive substrate by supplying a current between the long-sized conductive substrate as a cathode and an anode in an aq. soln. contg. nitric acid ions, zinc ions and carbohydrate. SOLUTION: The aq. soln. 1102 of 50 to 95 deg.C contg. the nitric acid ions and zinc ions at a concn. of 0.001 to 1mol/l by zinc nitrate, etc., and further contg. the carbohydrate, such as grape sugar, at a ratio of 0.001 to 300g/l is housed into a corrosion resistant vessel 1101 and is spouted and circulated in a water flow direction 1115 by a nozzle 1112. The long-sized conductive substrate 1103 as the cathode is moved at a high speed by a nonconductive belt 1110 in a direction 1116 reverse from the water flow direction 1115. Voltage is impressed between these 1103 and the anode 1104 by a power source 105 and the current is supplied at a current density of 10mA/dm<2> to 10A/dm<2> by adjusting the flow velocity and ion concn., respectively, of the aq. soln. 1102. The zinc oxide thin films having excellent characteristics are thus formed on the surface of the substrate 1103.
申请公布号 JPH10204684(A) 申请公布日期 1998.08.04
申请号 JP19970006379 申请日期 1997.01.17
申请人 CANON INC 发明人 TOKAWA MAKOTO
分类号 C25D9/08;H01L31/04 主分类号 C25D9/08
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