发明名称 |
Nonvolatile memory device and manufacturing method thereof |
摘要 |
A nonvolatile memory device and a manufacturing method thereof is disclosed. The device includes a gate electrode of a memory cell arranged in a memory cell region and having a floating gate electrode formed of a first conductive layer, an insulating film formed on the floating gate electrode and a control gate electrode formed of a second conductive layer on the insulating film; a gate electrode formed of a second conductive layer and arranged in a peripheral circuit region surrounding the memory cell region; a resistance device formed of the first conductive layer arranged in a boundary region between the memory cell region and the peripheral circuit region and/or the peripheral circuit region; an insulating film formed on a part of a surface of the resistance device; and a capping layer formed of the second conductive layer on the insulating film. Thus, generation of a stringer can be prevented so that malfunction of a device can be prevented.
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申请公布号 |
US5789293(A) |
申请公布日期 |
1998.08.04 |
申请号 |
US19960757247 |
申请日期 |
1996.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, MYOUNG-KWAN;KIM, KEON-SOO |
分类号 |
H01L21/8247;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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