发明名称 |
Dual-masked field isolation |
摘要 |
A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular, by forming field oxide islands. The superposition of field isolation configurations define the desired active areas. A presently preferred dual-mask process may be carried out using a single masking stack, or more preferably using a masking stack for each isolation mask. The present isolation process further allows isolation features to be optimized for a variety of isolation requirements on the same integrated circuit.
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申请公布号 |
US5789306(A) |
申请公布日期 |
1998.08.04 |
申请号 |
US19960634421 |
申请日期 |
1996.04.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROBERTS, CEREDIG;JUENGLING, WERNER |
分类号 |
H01L21/32;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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