发明名称 Apparatus and a method for growing a single crystal
摘要 An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.
申请公布号 US5788718(A) 申请公布日期 1998.08.04
申请号 US19960777731 申请日期 1996.12.20
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 YAMAGISHI, HIROTOSHI;TAKANO, KIYOTAKA;IINO, EIICHI;KIMURA, MASANORI
分类号 C30B15/00;C30B15/14;C30B29/06;(IPC1-7):C30B15/20 主分类号 C30B15/00
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