| 发明名称 |
Method for fabricating a laser diode |
| 摘要 |
The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, and the present invention uses both an oxide and a nitride pattern as an etch mask instead of the single oxide pattern in order to decrease the under cut of the edge of the oxide pattern.
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| 申请公布号 |
US5789275(A) |
申请公布日期 |
1998.08.04 |
| 申请号 |
US19960755816 |
申请日期 |
1996.11.26 |
| 申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE, SOO WON;CHO, GYU SEOG;KIM, TAE JIN;OH, KYUNG SEOK |
| 分类号 |
H01S5/00;H01S5/20;H01S5/227;H01S5/323;(IPC1-7):H01L21/20 |
主分类号 |
H01S5/00 |
| 代理机构 |
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