Programming voltage protection in non-volatile memory system

摘要

A method of controlling operation of a memory circuit, comprises: detecting a first programming voltage; comparing the first programming voltage to a plurality of acceptable initial voltage ranges; generating a memory program command to initiate a programming operation if the first programming voltage is within one of the plurality of acceptable initial voltage ranges; and continuing to assert the memory program command if the first programming voltage falls outside of one of the plurality of acceptable initial voltage ranges but remains within one of a plurality of acceptable operating voltage ranges.