发明名称 DEVICE AND METHOD FOR CHEMICAL-MECHANICAL POLISHING (CMP)
摘要 PROBLEM TO BE SOLVED: To prevent a scratch from generating at the surface of a semiconductor substrate by removing particles and massive polishing particles remaining on a polishing pad or an auxiliary pad effectively using a polishing pad brush. SOLUTION: In order to remove particles and massive polishing particles existing on a polishing pad 120a after a conditioning stage, the surface of the polishing pad 120a is brushed by a polishing pad brush 170. At this time, by proceeding a brushing stage while the polishing pad brush 170 is brought into close contact with the polishing pad 120a when the polishing pad brush 170 is transferred from the central part to the edge part of the polishing pad 120a, and while the polishing pad brush 170 is separated from the polishing pad 120a when the polishing pad brush 170 is transferred from the edge part to the central part of the polishing pad 120a, it is possible to increase brushing efficiency. By supplying cleaning liquid to the surface of the polishing pad 120a, it is also possible to increase brushing efficiency.
申请公布号 JPH10202507(A) 申请公布日期 1998.08.04
申请号 JP19970334637 申请日期 1997.12.04
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHO INKEN
分类号 B24B53/007;B24B53/017;H01L21/304 主分类号 B24B53/007
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