发明名称 INTEGRATED SEMICONDUCTOR DEVICE WITH TEMPERATURE SENSING CIRCUIT AND METHOD FOR OPERATING THE SAME
摘要 <p>A two-way conductive directional circuit formed in a polycrystalline silicon layer separated by an insulation film from a semiconductive element is one-way biased for sensing a temperature of the semiconductive element. The directional circuit may be provided with a bias in either conductive direction thereof for sensing a temperature of the semiconductive element, before being provided with a bias in the other conductive direction thereof for sensing the temperature of the semiconductive element.</p>
申请公布号 KR0145640(B1) 申请公布日期 1998.08.01
申请号 KR19940038134 申请日期 1994.12.28
申请人 NEC KK. 发明人 YAMAGUCHI, KAZMI;SAWADA, MASAMI;YAMADA, MANABU;HAGIMOTO, KEIZO
分类号 H01L27/04;H01L21/822;H01L27/02;H01L29/78;(IPC1-7):H01L23/58 主分类号 H01L27/04
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