| 摘要 |
PROBLEM TO BE SOLVED: To improve photoelectric transfer, or, energy transfer efficiency, by allowing a p-layer which constitutes an amorphous semiconductor layer to be a laminated structure of amorphous layer, doped with 3-group element, and a fine crystal growth layer. SOLUTION: A transparent conductive film 12 is formed on the surface of glass substrate 11 in advance, and on the surface of the transparent conductive film 12, an amorphous semiconductor layer 16 comprising a p-layer 13, an I-layer 14, 500nm in thickness, formed on the p-layer 13, and an n-layer 15 formed on the I-layer 14, is laminated. The p-layer 13 comprises an amorphous doping layer 17 and a fine crystal growth layer 18, alternately laminated. The p-layer 13 which constitutes the amorphous semiconductor layer 16 comprises a lamination structure of the amorphous doping layer 17 where 3-group element is doped and the fine crystal growth layer 18. Thus, at the p-layer 13, the amorphous doping layer 17 and the fine crystal layer 18 can be separately formed, so, B-related radical which obstructs crystal growth at film-formation of fine crystal layer can be excluded, thus growth of a fine crystal layer is allowed for improved transfer efficiency. |
