| 摘要 |
PROBLEM TO BE SOLVED: To prevent such performance degradation as corrosion of metal electrode and degradation of amorphous silicon layer, and to improve reliability in environment-resistance, etc., by forming, as an insulation protective layer, such insulation film as oxide film and nitride film, and amorphous silicon film. SOLUTION: A transparent conductive film 2 is formed on a glass substrate 1 by a puttering method, etc., and after patterned into an element shape, SiH4 gas is resolved by high-frequency grow discharge to form a p-i-n junction type amorphous silicon power-generation layer 3 on the substrate by a plasma CVD method, then an Al metal electrode 4 is vapor-deposited by a sputtering method to form an amorphous silicon solar battery structure, and then with a plasma CVD method, an silicon nitride film 5 and an amorphous silicon film 6 are formed as an insulation film, which are used as insulating protective films. Thereby, good environment-resistance is provided, with no bad affect on the performance of the amorphous silicon battery. |
