| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce power consumption and increase speed at the same time, even if power voltage is not changed, and can suppress the lead current when the device is not operated. SOLUTION: An n-type MOS transistor 12 and a p-type MOS transistor 14, which are connected severally between power sources supplied from outside and grounds and internal circuits and whose absolute values of the threshold voltages are larger than the threshold voltages of an n-type MOS transistor 16 and a p-type MOS transistor 18 constituting the internal circuits, electrically connect the power sources supplied from outside and the grounds with the internal circuits at normal operation, and electrically break the power sources supplied from outside and the grounds from the internal circuits at standby. |
