发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To realize a module structure which absorbes a thermal expansion gap, by dividing the inside of a module into a high thermal expansion block and a low thermal expansion module, reducing the dimension of the mutual contact between members whose thermal expansion coefficients are different, and reducing relative displacement caused by the difference of the thermal expansion coefficients to a mini mum. SOLUTION: The inside of a module is divided into a low thermal expansion block and a high thermal expansion block. In the low thermal expansion block, a low thermal expansion metal subbase 402 exists in the lowest part, one sheet of ceramics substrate 203 is mounted on the subbase 402, and a plurality of semiconductor elements 201 are mounted on the ceramics substrate 203. The high thermal expansion block is constituted of a high thermal expansion metal base 401 and a resin case 206. The contact of the high thermal expansion metal base 401 and the resin case 206 is constituted of a high thermal conductivity soft material 403 and screws 404. In the contact part, relative displacement is so generated that the thermal expansion direction becomes as free as possible, and generation of thermal stress can be restrained. As a result, the difference between thermal expansion coefficient of silicon and that of outer wall resin cab be absorbed.
申请公布号 JPH10200048(A) 申请公布日期 1998.07.31
申请号 JP19970003587 申请日期 1997.01.13
申请人 HITACHI LTD 发明人 INOUE KOICHI;TANAKA AKIRA;KOIKE YOSHIHIKO
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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