| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable the priming of dihydropyran using the dihydropyran as a primer to obviate the production of harmful byproducts in the process of forming a hydrophobic org. film by reaction with a wafer by using the dihydropyran as the primer for processing the wafer surface. SOLUTION: The dihydropyran is used as the primer for processing the wafer surface before coating of a photoresist for production of semiconductor devices. Namely, the hexamethyl disilazane mainly used heretofore as the conventional primer generates harmful gaseous ammonia at the time of reaction with the wafer surface. In contrast, the dihydropyran as the primer reacting with the surface of the wafer does not generate gases as the byproducts at all. Then, the need for discharging the gases is eliminated. Namely, the dihydropyran is formed by the addition reaction of the double bonds of the dihydropyran on the wafer surface and, in such a case, there is the advantage that the reaction byroducts are not generated in the addition reaction.</p> |
