| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress an oxidizing reaction due to the frictional heat by placing at least contact parts of a grinding stone and wafer in an inert gas atmosphere in a grinding step and grinding with the avoidance of oxidation of the grindstone and wafer. SOLUTION: In dicing steps, a grinding liq. is fed from a nozzle, etc., to polish a semiconductor wafer 1, using a blade 12. A head 13a is set to a grinding zone, an inert gas (N gas) feeder 22 is provided to feed specified amt. of the inert gas to the grinding zone. The grinding liq. and inert gas are simultaneously fed to a grinding area to polish it, while the semiconductor wafer 1 and blade 12 at the grinding part periphery are cooled and contaminants are removed. At the some time, the inert gas fed enters into a working point to suppress the oxidation synergistically caused by the frictional heat.</p> |
