| 摘要 |
PROBLEM TO BE SOLVED: To ensure sufficient photoresist thickness at etching of an antireflection film by etching the film, using a patterned photoresist on the antireffection film and a plasma of mixture of O2 and SO2 gases. SOLUTION: On an insulation layer 22 formed on a semiconductor substrate 21, an etching layer 23 is formed with an organic antireflection film 24 formed thereon, and a photoresist 25 is applied to the film 24 and patterned through the exposure and developing steps. Using the patterned photoresist 25 as a mask, the underlying antireflection film 24 is etched, using a mixture of gases O2 and SO2 . The etching rate of this film 24 to the photoresist 25 is set to approximately 1:1, the amt. from the top portion of the photoresist 25 which is cut and drops can thereby be minimized. |
