| 摘要 |
PROBLEM TO BE SOLVED: To easily produce a high-quality GaN crystal by growing a specified protective layer on a chemically decomposable substrate under a condition of not decomposing the substrate and growing specified crystal layer thereon under a condition of not decomposing the substrate. SOLUTION: On a substrate made of a chemically decomposing material, such as an Li oxide of a III b element or oxide of a II element an Inx Gay Al2 N where (0<=X<=1, 0<=Y<=1, 0<=Z<=1, X+Y+Z=1) protective layer is grown under the condition that the substrate does not decomposing. Further, Inx Gay Al2 N (0<=X<=1, 0<=Y<=1, 0<=Z<=1, X+Y+Z=1) crystal layer is grown thereon under the condition that the substrate decomposes, thereby manufacturing a high- quality, large-area GaN system substrate easily at a high yield. |
