| 摘要 |
PROBLEM TO BE SOLVED: To prevent threshold voltage from changing by specifying the energy of electronic beams used for the curing process of a spin-on-glass film and the amount of electrons to be injected. SOLUTION: An oxide film 3 and a spin-on-glass film 4 are sequentially formed on a silicon substrate 1, where a metal wiring 2 is formed and the spin-on-glass film 4 is cured by using the electronic beams. The energy of the electronic beams used for a curing process is in the range of 5-7kV, and the injecting amount of the electrons is not less than 3000μC/cm<2> . Threshold voltage is prevented from changing after the curing process of the glass film 4, by making the energy of the electronic beams to be 5-7kV. Then, a sufficient amount of electrons are injected into the spin-on-glass film 4 by making the injecting amount of electrons to be not less than 3000μC/cm<2> . Thus, the structure of the spin-on-glass film 4 becomes precise.
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