发明名称 DATA OUTPUT METHOD AND CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a data output circuit which enables high speed operation. SOLUTION: This data output circuit comprises a level shifter 200 for converting the level of sensing data by a sense amplifier and a data output buffer 300 which latches a level shifting data to input latch nodes N3, N4 and then latches this data to the output latch nodes N5, N6 depending on a signal KDATA and outputs such data responding to an output enable signal OE. Moreover, a self reset controller 500 is also provided to activate the sense amplifier and level shifter responding to a control signal SAEN and deactivates the sense amplifier and level shifter to reset the level shifting data when the level shifting data is output and the input stages PG1, PG2 are set to the input disabling condition depending on the reset condition of the level shifting data to store the latch data.</p>
申请公布号 JPH10199259(A) 申请公布日期 1998.07.31
申请号 JP19980000043 申请日期 1998.01.05
申请人 SAMSUNG ELECTRON CO LTD 发明人 KWON KOOK-HWAN;PARK HEE-CHOUL
分类号 G11C11/413;G11C7/00;G11C7/10;G11C11/407;G11C11/409;H03K19/0175;(IPC1-7):G11C11/413;H03K19/017 主分类号 G11C11/413
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