| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a gate insulating layer whose reliability is improved by forming a gate insulating layer, which insulates a trench corner part position, and becomes a single layer on an element active region. SOLUTION: This manufacturing method consists of the following. A process wherein an isolating region 32 containing a trench and a trench plug 323 a part, of which protrudes on the upper surface of a semiconductor substrate 31 at the same time when the trench is filled, is formed on a semiconductor substrate 31. An active region 33 in contact with the isolating region 32 is defined on the semiconductor substrate 31, a process wherein a sidewall spacer composed of oxidative material is formed on the side surface of the trench plug 323 protruded on the upper surface of the semiconductor substrate 31. A process wherein the surface of the active region 33 of the semiconductor substrate 31 and the sidewall spacer are oxidized, and a gate-insulating layer 34 reaching the upper part of the active region 33 of the semiconductor substrate 31, and the side surface of the trench plug 323 is formed.
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