| 摘要 |
PROBLEM TO BE SOLVED: To provide such a one-chip compact semiconductor light emitting element that is hard to break even when a voltage is applied in a reverse direction to p-side and n-side electrodes of the semiconductor light emitting element. SOLUTION: A light emitting part 3 in which a semiconductor layer containing an n-type layer 33 and a p-type layer 35 is laminated to form a light emitting layer and protection diode 5 in which a semiconductor layer containing an n-type area 53 and a p-type area 55 is provided to a diode, are formed on the same substrate 31, and the n-type layer of the light emitting part 3 and the p-type area of the protection diode 5 are connected electrically with each other and the p-type layer of the light emitting part 3 and the n-type area of the protection diode 5 are also connected electrically with each other. |
