| 摘要 |
An electrically operated memory element (30) includes a volume of memory material (36) characterized by: a large dynamic range of electrical resistance values; and the ability of at least a filamentary portion to be set, by the selected electrical signal to any resistance value in the dynamic range, regardless of the previous resistance value of the material so as to provide a single cell with multibit storage capabilities. The memory element (30) also includes a pair of contacts (6, 8) including 1) a thin-film layer (34, 38), preferably titanium carbonitride or titanium siliconitride, disposed adjacent to the memory material (36), used as a diffusion barrier to inhibit foreign material from entering the memory material (36), and 2) a thin-film layer (32, 40), preferably a Ti-W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface. |
