| 摘要 |
PROBLEM TO BE SOLVED: To assure longer storing time, in a dynamic semiconductor memory cell to store charges in a capacitor, by connecting one end of a capacitor to the connecting point of a couple of diodes and then substantially reducing a discharging current of a capacitor in such a manner as canceling a leak current of above diodes. SOLUTION: This memory cell is formed of a couple of diodes 4 and 6, one MOSFET 1 and a capacitor 3. In this cell, one end of a capacitor 3 is connected to a connecting point of a series circuit connected to allow a current to flow, the other end of capacitor 3 is connected to a semiconductor substrate 2 or to the ground electrode showing no potential change, one end of above series circuit is connected to a reset word line 7, and the drain, gate and source of MOSFET 1 are respectively connected to the other end of above series circuit, set word line 6 and bit line 8. |
