| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesion to a heat sink, by forming a second conductivity type electrode on a second conductivity type contact layer and forming a first conductivity type electrode on a first conductivity type contact layer, a mesa structure side face and a second conductivity type contact layer at the mesa structure. SOLUTION: On a sapphire substrate 1 a GaN buffer layer 2, an n-type GaN contact layer 3, an n-type InGaN layer 4 and a multiple quantum well active layer 7, a p-type GaN contact layer, etc., are laminated. Mesa structures 12, 15 are formed by etching, a p-type electrode 13 is formed and mutually conducted electrodes 16-18 are formed. On the surface of an AlN heat sink board 19 Ti/Pt/Au layers 20, 21 and welding AuSn layers 22, 23 are formed. The p-type electrode 13 is adhered to the AuSn layer 22 and n-type electrode 17 is adhered to the AuSn layer 23, thus making the electrodes 13, 17 mutually flush and hence improving the adhesion to the heat sink board 19. |
