| 摘要 |
A composite silicon carbide article and its method of making in which a surface layer or film of silicon carbide is deposited, for example by chemical vapor deposition (CVD), over a free standing silicon carbide substrate, as is formed by bulk methods such as sintering and hot pressing. The article is advantageously used in a plasma reactor, especially an oxide etcher for semiconductor fabrication, and may be any of several parts including the chamber wall, chamber roof, or collar around the wafer. The bulk SiC provides an inexpensive and strong support structure of perhaps a complex shape while the CVD SiC film has advantages for plasma processing and may be tailored to particular uses. The composite SiC structure is particularly useful in that the electrical conductivities of the bulk SiC and film SiC may be separately controlled so as to provide, among many possibilities, a grounding plane, a window for RF electromagnetic radiation, or both. The ultra-high purity achieved in CVD silicon carbide also benefits the control of micro-contamination inside the reactor chamber, a key factor for increased device yield. |
