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发明名称
MOS gated device base region with high breakdown resistance
摘要
申请公布号
EP0776048(A3)
申请公布日期
1998.07.29
申请号
EP19960118626
申请日期
1996.11.20
申请人
FUJI ELECTRIC CO., LTD.
发明人
KOBAYASHI, TAKASHI;NISHIMURA, TAKEYOSHI;FUJIHIRA, TATSUHIKO
分类号
H01L21/336;H01L29/06;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/78
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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