Method for forming a T-shaped gate electrode in a semi-conductor device, and the T-shaped gate electrode

摘要

This invention provides a manufacturing method of T-shaped gate electrode (12') in a semiconductor device, comprising the steps of: forming a first resist (3) on a semiconductor substrate (1) on which source and drain electrodes (2) are provided; forming a first gate opening (6) on said first resist (3) between said source and drain electrodes (2); deforming said first resist (3) by baking; forming a second resist (7) overlaying said first resist (3) and said first gate opening (6); forming a second gate opening (10) on said second resist (7) above said first gate opening (6), said second gate opening (10) being larger than said first gate opening (6); depositing electrode metal (11) for forming the T-shaped gate electrode (12') on said second gate opening (10); and removing said first and second resist (3,7), which is characterized in that a pair of dummy openings (6') are formed on said first resist (3) in proximity to both sides of said first gate opening (6), and a pair of first resist convex portions are formed when said first resist (3) are deformed by baking. This invention also provides a T-shaped gate electrode (12') in a semiconductor device, characterized in that the T-shaped gate electrode (12') is analogous to V-shape and a rise angle thereof is 30 degrees or more with respect to the surface of said semiconductor substrate (1). The T-shaped gate electrode of this invention and manufactured by this invention can reduce parasitic capacitance between the gate electrode 12 and the semiconductor substrate 1.