发明名称 |
Method of forming a metallic oxide semiconductor |
摘要 |
A method of forming MOS components provides that after the formation of the gate and the doped source/drain regions, a polysilicon layer is deposited and planarized using a chemical-mechanical polishing method. The resulting unremoved polysilicon layer acts as source/drain terminals. Through these arrangements, the ion doped source/drain regions will have shallow junctions, yet their junction integrity will not be compromised by subsequent contact window etching and metallization processes. Furthermore, the front-end processes for forming the MOS component provide a good planar surface that offers great convenience for the performance of subsequent back-end processes.
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申请公布号 |
US5786255(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19970863426 |
申请日期 |
1997.05.27 |
申请人 |
UNITED MIROELECTRONICS CORPORATION |
发明人 |
YEH, WEN-KUAN;CHEN, COMING;CHOU, JIH-WEN |
分类号 |
H01L21/336;H01L29/417;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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