发明名称 |
Method of making an SOI transistor |
摘要 |
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.
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申请公布号 |
US5786258(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19970786879 |
申请日期 |
1997.01.23 |
申请人 |
SONY CORPORATION |
发明人 |
MIWA, HIROYUKI;GOMI, TAKAYUKI;KATO, KATSUYUKI |
分类号 |
H01L29/73;H01L21/22;H01L21/331;H01L21/38;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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