| 摘要 |
A plug contact process wherein, after contact holes are etched, an adhesion layer (such as Ti/TiN) and a filler metal (such as tungsten) are deposited overall. A two-stage etch is then used: First, the filler metal is etched preferentially with respect to the adhesion layer, until an endpoint signal first indicates that said adhesion layer is exposed. No overetch is used at this stage. Thereafter a nonpreferential etch is used to clear residues of the filler metal, while also uniformly reducing the height of the adhesion layer. This prevents the tops of the plugs in the contact holes from being recessed. Aluminum (or other metal) is then deposited and patterned (using a stack etch to remove the undesired portions of the adhesion layer too) to implement the desired wiring pattern. This process thereby reduces voids, and resulting metallization defects, in a process with high-aspect-ratio contacts. In addition, the residual adhesion layer helps to reduce electromigration.
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