Process for electrical insulation in microelectronics, applicable in narrow cavities, by deposition of oxide in the viscous state and corresponding device

摘要

The invention relates to a process for electrical insulation of conductive or semiconductor materials of a substrate, characterized in that it comprises at least the following steps: (a) at least one so-called conformal layer of insulating oxide is deposited on the predetermined regions of the substrate to be insulated; (b) a layer of planarizing oxide precursor is deposited on the predetermined regions by chemical reaction in plasma phase of a tetraalkylsilicate and of hydrogen peroxide; (c) at least one layer of insulating oxide is deposited on the predetermined regions; and (d) a conversion annealing operation is carried out. It also relates to the semiconductor devices and integrated-circuit elements having insulated narrow cavities.