发明名称 Susceptor for a gas phase growth apparatus
摘要 A susceptor 1 for a gas phase growth apparatus to which a round depressed pocket 2 with a bottom a side wall is formed for the placing of a semiconductor wafer 3 wherein a protuberance 6 is provided on the circumference of the pocket at and near the position ere said semiconductor wafer touches said side wall 4 of the pocket 2 in such a way that the protuberance 6 covers a part of a chamfered area of said semiconductor wafer 3 without touching it. Thus cracks and breakage due to adhesion between a susceptor and a wafer may be prevented.
申请公布号 US5785764(A) 申请公布日期 1998.07.28
申请号 US19970924511 申请日期 1997.09.05
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 HOSHINA, YUSHO;HARIYA, HIDEKI
分类号 C23C16/44;C23C16/458;C30B25/12;H01L21/205;(IPC1-7):C23C16/00 主分类号 C23C16/44
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