发明名称 |
Susceptor for a gas phase growth apparatus |
摘要 |
A susceptor 1 for a gas phase growth apparatus to which a round depressed pocket 2 with a bottom a side wall is formed for the placing of a semiconductor wafer 3 wherein a protuberance 6 is provided on the circumference of the pocket at and near the position ere said semiconductor wafer touches said side wall 4 of the pocket 2 in such a way that the protuberance 6 covers a part of a chamfered area of said semiconductor wafer 3 without touching it. Thus cracks and breakage due to adhesion between a susceptor and a wafer may be prevented.
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申请公布号 |
US5785764(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19970924511 |
申请日期 |
1997.09.05 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
HOSHINA, YUSHO;HARIYA, HIDEKI |
分类号 |
C23C16/44;C23C16/458;C30B25/12;H01L21/205;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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