| 摘要 |
An external combustion oxidation apparatus includes a furnace core tube, a mixing chamber, a heater, a gas inlet tube, a temperature detector, and a temperature controller. In the furnace core tube, a semiconductor wafer is accommodated in a gas mixture atmosphere of water vapor and a dilute gas. The furnace core tube is heated to a predetermined temperature to form an oxide film on the semiconductor wafer. The mixing chamber mixes water vapor and the dilute gas and supplies a gas mixture into the furnace core tube. The heater heats the mixing chamber. The gas inlet tube connects the mixing chamber and the furnace core tube to each other. The temperature detector detects a temperature in the furnace core tube. The temperature controller controls a heating operation of the heater based on the temperature in the furnace core tube which is detected by the temperature detector.
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