| 摘要 |
PROBLEM TO BE SOLVED: To enable stable use, in forming a metallic oxide film with CVD method using a liquid phase feeding method, by eliminating adverse effect due to generation of residue in a vaporizer. SOLUTION: This device for growing/forming a metallic oxide film on a base body arranged for processing inside a reaction container is provided with a raw material container 100 for storing a liquid material for which BST material is dissolved in THF, a pump 110 for transporting the liquid material from the raw material container 100, a vaporizer 120 for gasifying in the high temperature part the liquid material so transported from this pump 110, a reaction container 140 into which the gas gasified by the vaporizer 120 is introduced for the growth of the metallic oxide film, and a pump 115 for cleaning the vaporizer 120 by transporting to it THF containing no BST material. |
