发明名称 Data output buffer for use in a semiconductor memory device
摘要 A data output buffer of a semiconductor memory device having a data output driver comprised of a pull-up transistor and a pull-down transistor includes a precharging circuit for precharging a gate terminal of the pull-up transistor of the data output driver to a power supply voltage level. Precharging the output driver reduces the load on the pumping voltage generator. This feature, together with precharging the pumping voltage generator itself, allow clocking the pumping voltage generator at a reduced clock rate to reduce power consumption without compromising operating speed of the memory device.
申请公布号 US5786711(A) 申请公布日期 1998.07.28
申请号 US19960668094 申请日期 1996.06.17
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 CHOI, HOON
分类号 G11C11/41;G11C7/10;G11C11/407;G11C11/409;G11C11/417;H03K19/00;(IPC1-7):H03K19/018;H03K19/017 主分类号 G11C11/41
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