发明名称 Flash memory device
摘要 The present invention relates to a flash memory device and more particularly to a flash memory device which can improve the performance of the memory cell due to the decrease in the verification time by performing the verification in parallel by selecting a plurality of addresses and then utilizing an integer multiple number of two or more of conventional verify modes at the time of verify mode.
申请公布号 US5787038(A) 申请公布日期 1998.07.28
申请号 US19960730872 申请日期 1996.10.18
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 PARK, JAE KWAN
分类号 G11C17/00;G11C16/06;G11C16/34;(IPC1-7):G11C11/34 主分类号 G11C17/00
代理机构 代理人
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