发明名称 |
Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method |
摘要 |
A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.
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申请公布号 |
US5786604(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19950527809 |
申请日期 |
1995.09.13 |
申请人 |
TOKYO GAS CO., LTD. |
发明人 |
YAMASHITA, SATOSHI;KAWARADA, HIROSHI;ITOH, MASAHIRO;NAKAMURA, NAOFUMI |
分类号 |
H01L21/04;H01L21/338;H01L21/76;H01L29/16;H01L29/812;(IPC1-7):H01L31/031;H01L29/00;H01L29/12 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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