| 摘要 |
1,202,003. Tunnel diodes. INTERNATIONAL BUSINESS MACHINES CORP. 26 Feb., 1969 [18 March, 1968], No. 10164/69. Heading H1K. [Also in Division G1] The molecular energy levels of a substance are studied by interposing a sample of the substance between the barrier and one of the electrodes of a tunnel diode, applying a changing voltage across the diode and sensing changes in conductance of the diode which occur at values of the applied voltage, corresponding to the energy levels of excited states of the substance. Tunnel diode.-As shown in Fig. 1a, the tunnel diode comprises a semi-conductor electrode 4 cut from a single crystal of P-type GaAs heavily doped with zinc to 2 Î 10<SP>19</SP> carriers per cc. to produce a Schottky barrier layer 50 Š thick on its surface. The sample 8 of liquid, liquefiable gas, or solid is interposed between the electrode 4 and a metal electrode 2. Other semi-conductors may be used for electrode 4, such as CdS, GaSb, InSb, InP, InAs, SiC and N-type and P-type germanium, degenerately doped with N-type or P-type material to produce the barrrier layer. Alternative forms of diode have an organic polymer barrier layer or an air or vacuum barrier layer between two metal electrodes, or the barrier may be formed by anodizing a metal electrode. Preferably, the temperature is 10‹ K to 77‹ K. |
