发明名称 Control of body effect in MOS transistors by switching source-to-body bias
摘要 A voltage level shifting circuit (FIG. 4) has a plurality of PMOS transistors M1, M2, M3 connected in parallel for respectively driving a capacitive load CL with a selected different voltage level V1, V2 or V3. Transistors M1, M2, M3 are controlled so that one of them is placed in the ON condition, with the others in the OFF condition, to connect one of the voltages V1, V2 or V3 to charge the load CL. The largest voltage transistor M3 has its body connected to its source. The lower voltage transistors M1, M2 have their bodies respectively connected to switches S1, S2, which connect the bodies to the sources when the transistors are placed in the ON condition and connect the bodies to the highest voltage V3 when the transistors are placed in the OFF condition.
申请公布号 US5786724(A) 申请公布日期 1998.07.28
申请号 US19960768876 申请日期 1996.12.17
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TEGGATZ, ROSS E.
分类号 H03K5/003;(IPC1-7):H03K5/003 主分类号 H03K5/003
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