发明名称 |
Apparatus for fabricating a single-crystal |
摘要 |
The present invention provides a method and an apparatus for fabricating a single-crystal semiconductor by means of the CZ method in which the oxygen concentration in the single-crystal semiconductor is controlled within an acceptable range. The apparatus comprises a regulating cylinder concentrically covering the single-crystal semiconductor which is pulled from a melt in a crucible; a main chamber for isolating the growing single-crystal semiconductor from external atmosphere; and a falling gas introducing means on top of the main chamber for introducing an inert gas into the main chamber. The apparatus is characterized in that a whirling gas introducing means on a circumferential portion of the main chamber introduces an whirling inert gas into the main chamber in a tangential direction to the side walls of the main chamber and the regulating cylinder.
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申请公布号 |
US5785757(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19960764989 |
申请日期 |
1996.12.13 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
HIRAISHI, YOSHINOBU |
分类号 |
C30B15/20;C30B15/00;C30B15/14;C30B29/06;H01L21/208;(IPC1-7):C30B35/00 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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