| 摘要 |
PROBLEM TO BE SOLVED: To drastically reduce the temp. difference between the temp. at the time of condition establishment and the temp. at the time of vapor growth and to execute the vapor growth at the same power as the power at the time of the condition establishment by specifying the surface roughness of the parts of a vertical type susceptor for vapor growth exclusive of its wafer housing recessed parts to a specific value approximate to the surface roughness of the surfaces to be treated of wafers or below. SOLUTION: The one surface of a disk-shaped susceptor body 2 which consists of graphite as a base material and is provided with a gas introducing port 1 at its center is provided with plural pieces of the circular wafer housing recessed parts 3 for housing the semiconductor wafers W. The surfaces of the wafers W are subjected to the vapor growth. In such a case, the surface roughness of the one surface of the susceptor body 2 exclusive of the wafer housing recessed parts 3 is specified to Rmax of <=0.5μm similar to the surface roughness of the surface to be treated of the semiconductor wafers W and the radiation heat from both are nearly similar, by which the temp. difference between the temp. at the time of the condition establishment and the temp. at the time of the vapor growth is drastically reduced. In addition, the stable execution of the actual vapor growth at the same power as the power at the time of the condition establishment is ensured.
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