| 摘要 |
The invention concerns a method for programming an EPROM-flash type memory (1) comprising memory cell words arranged in rows (23) and in columns (31), in which a transistor with floating grid (7) acts as memorising means, the floating grid transistors of memory cells (2-9) of the same word (10) having their control grid linked to a common word line connection (30) and their source connected to a common main electrode (29) of a selecting transistor (26) of which the other main electrode (28) is connected to a vertical word source connection (25). The method is characterised in that during the same programming cycle, M cell memories (2, 2b) are simultaneously programmed in N different words (10, 200), where M is less than the number P of a word memory cells, and where, M, N, and P are whole numbers. |
