| 摘要 |
The invention provides a method for producing wirings (67, 70, 75) and contacts (60) in an integrated circuit comprising the steps of: forming insulated gate components on a semiconductor substrate (10); applying a photo-reducible dielectric layer (80) to cover the substrate; etching holes (45, 50, 55) and forming contacts; photo-reducing the dielectric to increase its conductivity; covering the resulting structure with an interconnect layer (64); etching the interconnect layer to define wirings in electrical contact with the contacts (60); and oxidising the dielectric to reduce its conductivity. <IMAGE> |
