| 摘要 |
A read only memory structure comprises (1) one substrate whose surface has one first insulating layer; (2) one grid-arranged semiconductor layer, which is formed on the first insulating layer, and divided into bit line separated in parallel along first direction, channel region separated in parallel along second direction which is perpendicular to the first direction and connecting each bit line, and one grid gap between the bit line and channel region;(3) one second insulating layer, filling those grid gaps; (4) one third insulating layer, formed on the above each layer surface; The structure further comprises (5) one conductive layer, formed on the third insulating layer, and etched to multiple conductive lines separated in parallel along the second direction, in which the multiple conductive lines position overlap those channel regions.
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